13465-77-5 Usage
Description
Hexachlorodisilane (HCDS) is a colorless liquid chlorosilane that serves as a precursor for producing disilanes. It is a dioxidizer and is used in the production of silicon films and silicon nitride-based films. With a boiling point of 144-145.5°C and a density of 1.562 g/cm3, HCDS is a versatile chemical compound.
Uses
Used in Chemical Synthesis:
HCDS is used as a reducing agent in various chemical reactions, including deoxygenation and desulfurization of phosphine oxides, phosphine sulfides, and amine oxides. It is also employed for reducing nitro groups and sulfur diimides.
Used in Semiconductor Industry:
In the semiconductor industry, hexachlorodisilane is utilized in the chemical vapor deposition (CVD) technique to form silicon nitride. When combined with ammonia, it contributes to the production of silicon nitride films, which are essential for various applications in the semiconductor manufacturing process.
Used in Silicon Film Production:
Hexachlorodisilane plays a crucial role in the production of silicon films, which are widely used in the electronics industry for creating solar cells, transistors, and other components. Its dioxidizer properties make it an effective precursor for silicon film formation.
Flammability and Explosibility
Nonflammable
Check Digit Verification of cas no
The CAS Registry Mumber 13465-77-5 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,3,4,6 and 5 respectively; the second part has 2 digits, 7 and 7 respectively.
Calculate Digit Verification of CAS Registry Number 13465-77:
(7*1)+(6*3)+(5*4)+(4*6)+(3*5)+(2*7)+(1*7)=105
105 % 10 = 5
So 13465-77-5 is a valid CAS Registry Number.
InChI:InChI=1/Cl6Si2/c1-7(2,3)8(4,5)6
13465-77-5Relevant articles and documents
Anderson, H. H.
, p. 2761 - 2762 (1950)
Synthesis of Wiberg's tetrasilatetrahedrane (tBu3Si) 4Si4 by a one-pot procedure
Frank, Meyer-Wegner,Scholz, Stefan,Saenger, Inge,Schoedel, Frauke,Bolte, Michael,Wagner, Matthias,Lerner, Hans-Wolfram
, p. 6835 - 6837 (2010/04/01)
A one-pot synthesis of the tetrasilatetrahedrane (tBu3Si) 4Si4 was achieved by the reaction of HSiCl3 and Na[SitBu3]. In this reaction the silane tBu3SiH was obtained along with (tBu3
Pyrolysis of trichlorosilane in the presence of chloroform
Krasnova,Abramova,Alekseev,Chernyshev
, p. 1960 - 1963 (2007/10/03)
The pyrolysis of trichlorosilane in the presence of different amounts of chloroform and the copyrolysis of HSiCl3 with buta-1,3-diene in the presence of 1 mol.% chloroform were studied. The enthalpies of formation of products resulting from the pyrolysis of HSiCl3 in the presence of chloroform were calculated by the quantum chemical method. Based on the thermochemical data as well as data from GLC and mass spectrometry, it was concluded from the condensate composition that introduction of chloroform into the zone of pyrolysis of HSiCl3 favors generation of silylenes.