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368869-86-7

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368869-86-7 Usage

General Description

1-(4-Iodophenyl)-1H-pyrazole is a chemical compound with the molecular formula C9H7IN2. It is a pyrazole derivative with a 4-iodophenyl group attached to the pyrazole ring. 1-(4-IODOPHENYL)-1H-PYRAZOLE is commonly used as an intermediate in the synthesis of pharmaceuticals and agrochemicals. It exhibits potential biological activity, including as an antagonist of the cannabinoid receptor CB1 and a modulator of the corticotropin-releasing factor receptor. It is also used in research for its potential applications in the development of new drugs and therapeutic agents. Additionally, 1-(4-Iodophenyl)-1H-pyrazole has been studied for its potential role in the treatment of anxiety, depression, and other neurological disorders due to its interactions with various receptors in the central nervous system.

Check Digit Verification of cas no

The CAS Registry Mumber 368869-86-7 includes 9 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 6 digits, 3,6,8,8,6 and 9 respectively; the second part has 2 digits, 8 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 368869-86:
(8*3)+(7*6)+(6*8)+(5*8)+(4*6)+(3*9)+(2*8)+(1*6)=227
227 % 10 = 7
So 368869-86-7 is a valid CAS Registry Number.
InChI:InChI=1/C9H7IN2/c10-8-2-4-9(5-3-8)12-7-1-6-11-12/h1-7H

368869-86-7Upstream product

368869-86-7Downstream Products

368869-86-7Relevant articles and documents

Benzothiadiazole-Based Small-Molecule Semiconductors for Organic Thin-Film Transistors and Complementary-like Inverters

Kim, Hyekyoung,Reddy, M. Rajeshkumar,Kim, Hyungsug,Choi, Donghee,Kim, Choongik,Seo, SungYong

, p. 742 - 749 (2017)

New benzothiadiazole derivatives, 4,7-bis(5-phenylthiophen-2-yl)benzo[c][1,2,5]thiadiazole (PT-BTD) and 4,7-bis[4-(thiophen-2-yl)phenyl]benzo[c][1,2,5]thiadiazole (TP-BTD), were synthesized and characterized as small-molecule organic semiconductors for organic thin-film transistors (OTFTs) and complementary inverters. The thermal, optical, and electrochemical properties of the new compounds were fully characterized. Vacuum-deposition and solution-shearing methods were used to fabricate thin films based on these compounds. Thin films based on PT-BTD exhibited p-channel characteristics with hole mobilities as high as 0.10 cm2 V?1 s?1 and current on/off ratios >107 for top-contact/bottom-gate OTFT devices. With an optimized blending ratio of PT-BTD and the representative n-channel semiconductor N,N′-1H,1H-perfluorobutyl dicyanoperylenediimide, bulk heterojunction ambipolar transistors were fabricated with balanced hole and electron mobilities of 0.10 and 0.07 cm2 V?1 s?1, respectively. Furthermore, a complementary-like inverter was fabricated using ambipolar thin-film transistors, which showed a high voltage gain of 84.

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