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58473-78-2

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  • Factory Price OLED 99% 58473-78-2 TAPC; 4,4'-cyclohexylidenebis[N,N-bis(p-tolyl)aniline] Manufacturer

    Cas No: 58473-78-2

  • USD $ 0.1-0.1 / Gram

  • 1 Gram

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  • Xi'an Xszo Chem Co., Ltd.
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58473-78-2 Usage

Description

Benzenamine,4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)-, also known as TAPC, is a chemical compound that has been widely used as a hole transport material in organic light-emitting diodes (OLEDs) due to its high hole mobility.
Used in OLED Industry:
Benzenamine,4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)is used as a Hole Transport Layer material for OLED devices. Its high hole mobility makes it a popular choice for enhancing the performance and efficiency of OLEDs.

Check Digit Verification of cas no

The CAS Registry Mumber 58473-78-2 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 5,8,4,7 and 3 respectively; the second part has 2 digits, 7 and 8 respectively.
Calculate Digit Verification of CAS Registry Number 58473-78:
(7*5)+(6*8)+(5*4)+(4*7)+(3*3)+(2*7)+(1*8)=162
162 % 10 = 2
So 58473-78-2 is a valid CAS Registry Number.

58473-78-2SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 12, 2017

Revision Date: Aug 12, 2017

1.Identification

1.1 GHS Product identifier

Product name 4-methyl-N-[4-[1-[4-(4-methyl-N-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-N-(4-methylphenyl)aniline

1.2 Other means of identification

Product number -
Other names di-[4-(N,N-di-p-tolylamino)phenyl]cyclohexane

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:58473-78-2 SDS

58473-78-2Synthetic route

4-tolyl iodide
624-31-7

4-tolyl iodide

1,1-bis-(4-aminophenyl)cyclohexane
3282-99-3

1,1-bis-(4-aminophenyl)cyclohexane

1,1-bis[4-(di-p-tolylamino)phenyl]cyclohexane
58473-78-2

1,1-bis[4-(di-p-tolylamino)phenyl]cyclohexane

Conditions
ConditionsYield
With 18-crown-6 ether; potassium carbonate In 1,2-dichloro-benzene at 150℃; for 48h; Inert atmosphere; Schlenk technique;54%

58473-78-2Downstream Products

58473-78-2Relevant articles and documents

Tuning the energy level of tapc: Crystal structure and photophysical and electrochemical properties of 4,400-(cyclohexane-1,1-diyl)bis[n,n-bis(4-methoxyphenyl) aniline]

Lee, Sunhee,Kwak, Soyoung,Lee, Keumhee,Kim, Byung Gi,Kim, Minseong,Wang, Dong Hwan,Han, Won-Sik

, p. 919 - 926 (2019/07/15)

The energy level of a hole-transporting material (HTM) in organic electronics, such as organic light-emitting diodes (OLEDs) and perovskite solar cells (PSCs), is important for device efficiency. In this regard, we prepared 4,40-(cyclohexane-1,1-diyl)bis[N,N-bis(4-methoxyphenyl)aniline] (TAPC-OMe), C46H46N204, to tune the energy level of 4,40-(cyclohexane-1,1-diyl)bis[N,Nbis( 4-methylphenyl)aniline] (TAPC), which is a well-known HTM commonly used in OLED applications. A systematic characterization of TAPC-OMe, including 1H and 13C NMR, elemental analysis, UV-Vis absorption, fluorescence emission, density functional theory (DFT) calculations and single-crystal X-ray diffraction, was performed. TAPC-OMe crystallized in the triclinic space group P1, with two molecules in the asymmetric unit. The dihedral angles between the central amine triangular planes and those of the phenyl groups varied from 26.56 (9) to 60.34 (8) due to the steric hindrance of the central cyclohexyl ring. This arrangement might be induced by weak hydrogen bonds and C-Hπ (Ph) interactions in the extended structure. The emission maxima of TAPC-OMe showed a significant bathochomic shift compared to that of TAPC. A strong dependency of the oxidation potentials on the nature of the electron-donating ability of substituents was confirmed by comparing oxidation potentials with known Hammett parameters (o).

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