617-85-6Relevant articles and documents
Buckton, G.
, p. 17 - 25 (1863)
Preparation method of high-purity triethyl antimony
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Paragraph 0026; 0027; 0028; 0029; 0030; 0031, (2017/08/27)
The invention provides a preparation method of high-purity triethyl antimony. Under the protection of inert gas, the preparation method of the high-purity triethyl antimony comprises the following steps: S1, adding a monohalogenated ethane solution into a mixture of magnesium chips and an organic solvent to prepare a Grignard reagent; S2, dropwise adding an antimony trichloride solution into the Grignard reagent, and reacting to prepare a triethyl antimony solution; and S3, carrying out atmospheric distillation twice, reduced pressure distillation twice and reduced pressure rectification once on the triethyl antimony solution to obtain the high-purity triethyl antimony with the purity more than 5N. The method for synthesizing triethyl antimony by adopting a Grignard reagent process is carried out under the protection of the inert gas, the yield is high, the purity is high, the operation is safe, and the cost is low.
The assessment of some Sb-Te single-source compounds for MOCVD applications
Dickson, Ron S.,Heazle, Kerryn D.
, p. 189 - 198 (2007/10/02)
The new compounds Et2SbTeEt, Me2SbTeEt, Et2SbTeiPr and Et2AsTeEt have been prepared by reactions of Et4Sb2, Me4Sb2 or Et4As2 with iPr2Te2 or Et2Te2.An alternative route to Et2SbTeEt involved the reaction of Et2SbBr with EtTeLi.The compounds are light sensitive, and some of them cannot be obtained pure because of facile radical decomposition or reverse dissociation to the corresponding R4E2 and R'2Te2.Thermal degradation of Et2SbTeEt in a hydrogen stream under conventional MOCVD condition gives a metal deposit containing Sb and Te in the ratio 1.6:1.The related compound Et2SbTeSbEt2 reacts with H2 at room temperature to give Te metal and presumably HSbEt2. Keywords: Antimony; Arsenic; Tellurium; MOCVD
