Tellurium CAS NO.13494-80-9

Tellurium Shot Pure :4N or 99.99% Technic: Anode mud –electrolysis -vacuum distillation--pelletize under Nitrogen protective Analysis :ICP-MS or…

Tellurium Shot Pure :4N or 99.99% Technic: Anode mud –electrolysis -vacuum distillation--pelletize under Nitrogen protective Analysis :ICP-MS or GDMS （Please find the COA attached! ） Size :0.5-2mm or 1-3mm (or customize) Neutral Packing :Vacuum packing or Nitrogen protecting ,2Kgs /Bags Usage: It is mainly used in the manufacture of II-VI compound semiconductor, thermoelectric converting element, refrigerating element, ,infrared detector, Testing instrument (Testing Si,C elements in molten steel )etc. Tellurium (Te) 1, Physical character: Atomic Weight: 127.60 Electronegative: 2.1 Density: ρ=6.24 g·cm?3 Melting Point: 449.51 ℃ Boiling Point: 988 ℃ 2, Specification: High Purity Tellurium: Te-05 Grade 99.999. The content of Tellurium is above 99.999%. The total content of Ag, Al, Bi, Ca, Cr, Cd, Cu, Fe, Mg, Mn, Na, Ni, Pb, Se, Si & Zn is bellow 10 ppm; Uitra Purity Tellurium: Te-06 Grade 99.9999. The content of Tellurium is above 99.9999%. The total content of Ag, Al, Bi, Ca, Cr, Cd, Cu, Fe, Mg, Mn, Na, Ni, Pb, Se, Si & Zn is bellow 1 ppm; Uitra High Purity Tellurium: Te-07 Grade 99.99999. The content of Tellurium is above 99.99999%. The total content of Ag, Al, Bi, Ca, Cr, Cd, Cu, Fe, Mg, Mn, Na, Ni, Pb, Se, Si & Zn is bellow 0.1 ppm. 3, Physical Size: Lump, Ingot, Powder. 4, Usage: It is mainly used in the manufacture of II-VI compound semiconductor, thermoelectric converting element, refrigerating element, piezocrystal and infrared detector etc. 5, Packing: It is packed with dacron film, then covered with a sealed plastic film bag or vacuum sealed in a glass ampule.