15453-67-5Relevant articles and documents
Isotope Effects in the Nuclear Magnetic Resonance Spectra of Mixed Aqua Complexes of AlIII
Akitt, J. W.,Howart, Oliver W.
, (1989)
Alumminium-27 n.m.r. measurements of the isotope shifts caused by the substituton of hydrogen by deuterium in the water ligands of the hydrate complexes + and 6-n>3+, 0 /= n /= 6, are reported in a
Aluminium-27 Nuclear Magnetic Resonance Studies of the Hydrolysis of Aluminium(III). Part 5. Slow Hydrolysis using Aluminium Metal
Akitt, J. W.,Farthing, Alan
, p. 1624 - 1628 (1981)
Aluminium-27 n.m.r. spectra are presented of solutions prepared by the relatively slow hydrolysis of AlCl3 solutions with aluminium metal in the presence of mercury.The ways in which the spectra change with temperature or concentration are described and changes are also noted to occur as a function of magnetic field strength.It is not possible to give an unequivocal answer as to what is the nature of the species present in these solutions but there seem to be a variety of ions present which are quite easily interconvertible, contain octahedrally co-ordinated Al, and are associated in some way with fragments which resemble (7+) (Al13) since some tetrahedrally co-ordinated Al always seems to be present.Thus it is suggested that structures may consist of partial Al13 units with octahedral units disposed as flexible chains and/or forming cross links.
Etching AlAs with HF for epitaxial lift-off applications
Voncken,Schermer,Van Niftrik,Bauhuis,Mulder,Larsen,Peters,De Bruin,Klaassen,Kelly
, p. G347-G352 (2008/10/09)
The epitaxial lift-off process allows the separation of a thin layer of III/V material from the substrate by selective etching of an intermediate AlAs layer with HF In a theory proposed for this process, it was assumed that for every mole of AIAs dissolved three moles of H2 gas are formed. In order to verify this assumption the reaction mechanism and stoichiometry were investigated in the present work. The solid, solution and gaseous reaction products of the etch process have been examined by a number of techniques, It was found that aluminum fluoride is formed, both in the solid form as well as in solution. Furthermore, instead of H2 arsine (AsH3) is formed in the etch process. Some oxygen-related arsenic compounds like AsO, AsOH, and AsO2 have also been detected with gas chromatography/mass spectroscopy. The presence of oxygen in the etching environment accelerates the etching process, while a total absence of oxygen resulted in the process coming to a premature halt. It is argued that, in the absence of oxygen, the etching surface is stabilized, possibly by the sparingly soluble A1F3 or by solid arsenic.
